A sample chamber for in situ high-energy X-ray studies of crystal growth at deeply buried interfaces in harsh environments

摘要

We introduce a high pressure high temperature chamber for in situ synchrotron X-ray studies. The chamber design allows for in situ studies of thin film growth from solution at deeply buried interfaces in harsh environments. The temperature can be controlled between room temperature and 1073 K while the pressure can be set as high as 50 bar using a variety of gases including N$_{2}$ and NH$_{3}$. The formation of GaN on the surface of a Ga$_{13}$Na$_{7}$ melt at 1073 K and 50 bar of N$_{2}$ is presented as a performance test.